Dual Gate Metal-Insulator Tunneling Transistors
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Date
Author
Institution
http://id.loc.gov/authorities/names/n79058482
Degree Level
Master's
Degree
Master of Science
Department
Department of Electrical and Computer Engineering
Specialization
Photonics and Plasmas
Supervisor / Co-Supervisor and Their Department(s)
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Abstract
This thesis introduces and investigates new class of metal insulator tunneling transistor (MITT) devices. MITT devices with sub 5nm features, having a geometry that represents a realistic implementation, are studied using a simulation model developed for this thesis. The effect of changing the dimensions of the device is studied, and the performance of devices having different geometries is compared. Two different fabrication processes are developed and preliminary results for one of these processes are presented.
Item Type
http://purl.org/coar/resource_type/c_46ec
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This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
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Language
en