Dual Gate Metal-Insulator Tunneling Transistors

Simple item page
dc.contributor.advisorElezzabi, Abdulhakem (Electrical and Computer Engineering)
dc.contributor.authorMcDermott, Aidan J.
dc.date.accessioned2025-05-28T18:50:31Z
dc.date.available2025-05-28T18:50:31Z
dc.date.issued2023-11
dc.description.abstractThis thesis introduces and investigates new class of metal insulator tunneling transistor (MITT) devices. MITT devices with sub 5nm features, having a geometry that represents a realistic implementation, are studied using a simulation model developed for this thesis. The effect of changing the dimensions of the device is studied, and the performance of devices having different geometries is compared. Two different fabrication processes are developed and preliminary results for one of these processes are presented.
dc.identifier.doihttps://doi.org/10.7939/r3-0kd8-5525
dc.language.isoen
dc.rightsThis thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
dc.subjectMITT
dc.subjectNanoelectronics
dc.titleDual Gate Metal-Insulator Tunneling Transistors
dc.typehttp://purl.org/coar/resource_type/c_46ec
thesis.degree.disciplinePhotonics and Plasmas
thesis.degree.grantorhttp://id.loc.gov/authorities/names/n79058482
thesis.degree.levelMaster's
thesis.degree.nameMaster of Science
ual.date.graduationFall 2023
ual.departmentDepartment of Electrical and Computer Engineering
ual.jupiterAccesshttp://terms.library.ualberta.ca/public

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
McDermott_Aidan_J_202305_MSc.pdf
Size:
3.8 MB
Format:
Adobe Portable Document Format
Download

Collections

Theses and Dissertations